IEEE Electron Device Letters

Impact, Factor and Metrics, Impact Score, Ranking, h-index, SJR, Rating, Publisher, ISSN, and More

About IEEE Electron Device Letters

IEEE Electron Device Letters is a journal covering the technologies/fields/categories related to Electrical and Electronic Engineering (Q1); Electronic, Optical and Magnetic Materials (Q1). It is published by Institute of Electrical and Electronics Engineers Inc.. The overall rank of IEEE Electron Device Letters is 3831. According to SCImago Journal Rank (SJR), this journal is ranked 1.15. SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come. SJR acts as an alternative to the Journal Impact Factor (or an average number of citations received in last 2 years). This journal has an h-index of 179. The best quartile for this journal is Q1.

The ISSN of IEEE Electron Device Letters journal is 7413106. An International Standard Serial Number (ISSN) is a unique code of 8 digits. It is used for the recognition of journals, newspapers, periodicals, and magazines in all kind of forms, be it print-media or electronic. IEEE Electron Device Letters is cited by a total of 6667 articles during the last 3 years (Preceding 2024).

IEEE Electron Device Letters Impact IF 2024-2025

The Impact IF 2024 of IEEE Electron Device Letters is 4.53, which is computed in 2025 as per its definition. IEEE Electron Device Letters IF is increased by a factor of 0.4 and approximate percentage change is 9.69% when compared to preceding year 2023, which shows a rising trend. The impact IF, also denoted as Journal impact score (JIS), of an academic journal is a measure of the yearly average number of citations to recent articles published in that journal. It is based on Scopus data.

IEEE Electron Device Letters Impact IF 2025 Prediction

Impact IF 2024 of IEEE Electron Device Letters is 4.53. If the same upward trend persists, Impact IF may rise in 2025 as well.

IEEE Electron Device Letters h-index

 

IEEE Electron Device Letters has an h-index of 179. It means 179 articles of this journal have more than 179 number of citations. The h-index is a way of measuring the productivity and citation impact of the publications. The h-index is defined as the maximum value of h such that the given journal/author has published h papers that have each been cited at least h number of times.

IEEE Electron Device Letters ISSN

The ISSN of IEEE Electron Device Letters is 7413106. ISSN stands for International Standard Serial Number.

An ISSN is a unique code of 8 digits. It is used for the recognition of journals, newspapers, periodicals, and magazines in all kind of forms, be it print-media or electronic.

IEEE Electron Device Letters Rank and SCImago Journal Rank (SJR)

The overall rank of IEEE Electron Device Letters is 3831. According to SCImago Journal Rank (SJR), this journal is ranked 1.15. SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come.

SJR of IEEE Electron Device Letters by Year

Ranking of IEEE Electron Device Letters by Year

IEEE Electron Device Letters Publisher

IEEE Electron Device Letters is published by Institute of Electrical and Electronics Engineers Inc.. It's publishing house is located in United States. Coverage history of this journal is as following: 1980-2025. The organization or individual who handles the printing and distribution of printed or digital publications is known as Publisher.

Call For Papers

Visit the official website of the journal/conference to check the further details about the call for papers.

Abbreviation

The IS0 4 standard abbreviation of IEEE Electron Device Letters is IEEE Electron Device Lett.. This abbreviation ('IEEE Electron Device Lett.') is well recommended and approved for the purpose of indexing, abstraction, referencing and citing goals. It meets all the essential criteria of ISO 4 standard.

ISO 4 (International Organization for Standardization 4) is an international standard that defines a uniform and consistent system for abbreviating serial publication titles and journals.

How to publish in IEEE Electron Device Letters

If your research field is/are related to Electrical and Electronic Engineering (Q1); Electronic, Optical and Magnetic Materials (Q1), then please visit the official website of this journal.

Acceptance Rate

The acceptance rate/percentage of any academic journal/conference depends upon many parameters. Some of the critical parameters are listed below.

• The demand or interest of researchers/scientists in publishing in a specific Journal/Conference.
• Peer review complexity and timeline.
• The mix of unsolicited and invited submissions.
• The time it takes from manuscript submission to final publication.
• And Many More.

It is essential to understand that the acceptance rate/rejection rate of papers varies among journals. Some Journals considers all the manuscripts submissions as a basis of acceptance rate computation. On the other hand, few consider the only manuscripts sent for peer review or few even not bother about the accurate maintenance of total submissions. Hence, it can provide a rough estimation only.

The best way to find out the acceptance rate is to reach out to the associated editor or to check the official website of the Journal/Conference.

Credits and Sources

• Scimago Journal & Country Rank (SJR), https://www.scimagojr.com/
• Journal Impact Factor, https://clarivate.com/