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Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Impact, Factor and Metrics, Impact Score, Ranking, h-index, SJR, Rating, Publisher, ISSN, and More

Last Updated on October 31, 2023

Impact Score

2020-2021

2.14

h-Index

2020-2021

 49

Rank

2020-2021

 7015

SJR

2020-2021

 0.709

Note: The impact score or impact index shown here is equivalent to the average number of times documents published in a journal/conference in the past two years have been cited in the current year (i.e., Cites / Doc. (2 years)). It is based on Scopus data and can be a little higher or different compared to the impact factor (IF) produced by Journal Citation Report. Please refer to the Web of Science data source to check the exact journal impact factor ™ (Thomson Reuters) metric.

Important Metrics and Factor

Title Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Abbreviation Proc. Int. Symp. Power Semicond. Devices ICs
Publication Type Conference and proceedings
Subject Area, Categories, Scope Engineering (miscellaneous)
h-index 49
Overall Rank/Ranking 7015
SCImago Journal Rank (SJR) 0.709
Impact Score 2.14
Publisher
Country United States
ISSN 10636854
Best Quartile -
Coverage History




About Proceedings of the International Symposium on Power Semiconductor Devices and ICs


Proceedings of the International Symposium on Power Semiconductor Devices and ICs is a conference and proceedings covering the technologies/fields/categories related to Engineering (miscellaneous). It is published by . The overall rank of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 7015. According to SCImago Journal Rank (SJR), this conference and proceedings is ranked 0.709. SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come. SJR acts as an alternative to the Journal Impact Factor (or an average number of citations received in last 2 years). This conference and proceedings has an h-index of 49. The best quartile for this conference and proceedings is -.

The ISSN of Proceedings of the International Symposium on Power Semiconductor Devices and ICs conference and proceedings is 10636854. An International Standard Serial Number (ISSN) is a unique code of 8 digits. It is used for the recognition of journals, newspapers, periodicals, and magazines in all kind of forms, be it print-media or electronic. Proceedings of the International Symposium on Power Semiconductor Devices and ICs is cited by a total of 821 articles during the last 3 years (Preceding 2020).


Proceedings of the International Symposium on Power Semiconductor Devices and ICs Impact IF 2020-2021


The Impact IF 2020 of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 2.14, which is computed in 2021 as per its definition. The impact IF, also denoted as Journal impact score (JIS), of an academic journal is a measure of the yearly average number of citations to recent articles published in that journal. It is based on Scopus data.

Table Setting


Impact IF Trend


Year wise Impact IF of Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Based on Scopus data.


Year Impact IF
2023/2024 Coming Soon
2020 2.14
2019 1.98
2018 2.08
2017 2.50
2016 2.07
2015 1.63
2014 1.60

Proceedings of the International Symposium on Power Semiconductor Devices and ICs h-index


  Table Setting

Proceedings of the International Symposium on Power Semiconductor Devices and ICs has an h-index of 49. It means 49 articles of this conference and proceedings have more than 49 number of citations. The h-index is a way of measuring the productivity and citation impact of the publications. The h-index is defined as the maximum value of h such that the given journal/author has published h papers that have each been cited at least h number of times.




Proceedings of the International Symposium on Power Semiconductor Devices and ICs ISSN


The ISSN of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 10636854. ISSN stands for International Standard Serial Number.

An ISSN is a unique code of 8 digits. It is used for the recognition of journals, newspapers, periodicals, and magazines in all kind of forms, be it print-media or electronic.

Table Setting

Proceedings of the International Symposium on Power Semiconductor Devices and ICs Rank and SCImago Journal Rank (SJR)


The overall rank of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 7015. According to SCImago Journal Rank (SJR), this conference and proceedings is ranked 0.709. SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come.

SJR of Proceedings of the International Symposium on Power Semiconductor Devices and ICs by Year


Year SJR
2023/2024 Coming Soon
2020 0.709
2019 0.656
2018 0.771
2017 0.462
2016 0.642
2015 0.731
2014 0.666

Ranking of Proceedings of the International Symposium on Power Semiconductor Devices and ICs by Year


Year Ranking
2023/2024 Coming Soon
2020 7015
2019 7484
2018 6161
2017 9816
2016 7375
2015 6514
2014 7008

Proceedings of the International Symposium on Power Semiconductor Devices and ICs Publisher


Table Setting

Proceedings of the International Symposium on Power Semiconductor Devices and ICs is published by . It's publishing house is located in United States. Coverage history of this conference and proceedings is as following: . The organization or individual who handles the printing and distribution of printed or digital publications is known as Publisher.


Call For Papers


Visit the official website of the journal/conference to check the further details about the call for papers.


Abbreviation


The IS0 4 standard abbreviation of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is Proc. Int. Symp. Power Semicond. Devices ICs. This abbreviation ('Proc. Int. Symp. Power Semicond. Devices ICs') is well recommended and approved for the purpose of indexing, abstraction, referencing and citing goals. It meets all the essential criteria of ISO 4 standard.

ISO 4 (International Organization for Standardization 4) is an international standard that defines a uniform and consistent system for abbreviating serial publication titles and journals.


How to publish in Proceedings of the International Symposium on Power Semiconductor Devices and ICs


If your research field is/are related to Engineering (miscellaneous), then please visit the official website of this conference and proceedings.


Acceptance Rate


The acceptance rate/percentage of any academic journal/conference depends upon many parameters. Some of the critical parameters are listed below.

  • The demand or interest of researchers/scientists in publishing in a specific Journal/Conference.
  • Peer review complexity and timeline.
  • The mix of unsolicited and invited submissions.
  • The time it takes from manuscript submission to final publication.
  • And Many More.

It is essential to understand that the acceptance rate/rejection rate of papers varies among journals. Some Journals considers all the manuscripts submissions as a basis of acceptance rate computation. On the other hand, few consider the only manuscripts sent for peer review or few even not bother about the accurate maintenance of total submissions. Hence, it can provide a rough estimation only.

The best way to find out the acceptance rate is to reach out to the associated editor or to check the official website of the Journal/Conference.



Frequently Asked Questions (FAQs)


What's the latest impact IF of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

Proceedings of the International Symposium on Power Semiconductor Devices and ICs latest impact IF is 2.14. It's evaluated in the year 2020. The highest and the lowest impact IF or impact score of this conference and proceedings are 2.50 (2017) and 1.60 (2014), respectively, in the last 7 years. Moreover, its average IS is 2 in the previous 7 years.


What's the SCImago Journal Rank (SJR) of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The Proceedings of the International Symposium on Power Semiconductor Devices and ICs has an SJR (SCImago Journal Rank) of 0.709, according to the latest data. It is computed in the year 2021. In the past 7 years, this conference and proceedings has recorded a range of SJR, with the highest being 0.771 in 2018 and the lowest being 0.462 in 2017. Furthermore, the average SJR of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs over the previous 7-year period stands at 2.


What's the latest h-index of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The latest h-index of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 49.


Who's the publisher of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is published by the , with its country of publication being the United States.


What's the current ranking of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is currently ranked 7015 out of 27955 Journals, Conferences, and Book Series in the latest ranking. Over the course of the last 7 years, this conference and proceedings has experienced varying rankings, reaching its highest position of 6161 in 2018 and its lowest position of 9816 in 2017.


What's the abbreviation or short name for the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The standard ISO4 abbreviation for the Proceedings of the International Symposium on Power Semiconductor Devices and ICs is Proc. Int. Symp. Power Semicond. Devices ICs.


Is the "Proceedings of the International Symposium on Power Semiconductor Devices and ICs" classified as a Journal, Conference and Proceedings, Trade Journal or Book Series?

Proceedings of the International Symposium on Power Semiconductor Devices and ICs is classified as a conference and proceedings that the publishes.


What's the scope or major areas of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The Proceedings of the International Symposium on Power Semiconductor Devices and ICs encompasses the following areas:

  • Engineering (miscellaneous)

For a more comprehensive understanding of its scope, check the official website of this conference and proceedings.


What's the ISSN of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is assigned the following International Standard Serial Numbers (ISSN): 10636854.


Credits and Sources


  • Scimago Journal & Country Rank (SJR), https://www.scimagojr.com/
  • Journal Impact Factor, https://clarivate.com/



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Check complete list




Year wise Impact Score (IS) of Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Impact Score Table

Year Impact Score (IS)
2021/2022 Coming Soon
2020 2.14
2019 1.98
2018 2.08
2017 2.50
2016 2.07
2015 1.63
2014 1.60