| Title | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
| Abbreviation | Proc. Int. Symp. Power Semicond. Devices ICs |
| Publication Type | Conference and proceedings |
| Subject Area, Categories, Scope | Engineering (miscellaneous) |
| h-index | 55 |
| Overall Rank/Ranking | 9089 |
| SCImago Journal Rank (SJR) | 0.635 |
| Impact Score | 2.19 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Country | United States |
| ISSN | 10636854 |
| Best Quartile | - |
| Coverage History | 1992, 2005-2024 |
Proceedings of the International Symposium on Power Semiconductor Devices and ICs is a conference and proceedings covering the technologies/fields/categories related to Engineering (miscellaneous). It is published by Institute of Electrical and Electronics Engineers Inc.. The overall rank of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 9089. According to SCImago Journal Rank (SJR), this conference and proceedings is ranked 0.635. SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come. SJR acts as an alternative to the Journal Impact Factor (or an average number of citations received in last 2 years). This conference and proceedings has an h-index of 55. The best quartile for this conference and proceedings is -.
The ISSN of Proceedings of the International Symposium on Power Semiconductor Devices and ICs conference and proceedings is 10636854. An International Standard Serial Number (ISSN) is a unique code of 8 digits. It is used for the recognition of journals, newspapers, periodicals, and magazines in all kind of forms, be it print-media or electronic. Proceedings of the International Symposium on Power Semiconductor Devices and ICs is cited by a total of 636 articles during the last 3 years (Preceding 2024).
The Impact IF 2024 of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 2.19, which is computed in 2025 as per its definition. The impact IF, also denoted as Journal impact score (JIS), of an academic journal is a measure of the yearly average number of citations to recent articles published in that journal. It is based on Scopus data.
| Year | Impact IF |
|---|---|
| 2025/2026 | Coming Soon |
| 2024 | 2.19 |
| 2020 | 2.14 |
| 2019 | 1.98 |
| 2018 | 2.08 |
| 2017 | 2.50 |
| 2016 | 2.07 |
| 2015 | 1.63 |
| 2014 | 1.60 |
Proceedings of the International Symposium on Power Semiconductor Devices and ICs has an h-index of 55. It means 55 articles of this conference and proceedings have more than 55 number of citations. The h-index is a way of measuring the productivity and citation impact of the publications. The h-index is defined as the maximum value of h such that the given journal/author has published h papers that have each been cited at least h number of times.
The ISSN of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 10636854. ISSN stands for International Standard Serial Number.
An ISSN is a unique code of 8 digits. It is used for the recognition of journals, newspapers, periodicals, and magazines in all kind of forms, be it print-media or electronic.
The overall rank of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 9089. According to SCImago Journal Rank (SJR), this conference and proceedings is ranked 0.635. SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come.
| Year | SJR |
|---|---|
| 2025/2026 | Coming Soon |
| 2024 | 0.635 |
| 2020 | 0.709 |
| 2019 | 0.656 |
| 2018 | 0.771 |
| 2017 | 0.462 |
| 2016 | 0.642 |
| 2015 | 0.731 |
| 2014 | 0.666 |
| Year | Ranking |
|---|---|
| 2025/2026 | Coming Soon |
| 2024 | 9089 |
| 2020 | 7015 |
| 2019 | 7484 |
| 2018 | 6161 |
| 2017 | 9816 |
| 2016 | 7375 |
| 2015 | 6514 |
| 2014 | 7008 |
Proceedings of the International Symposium on Power Semiconductor Devices and ICs is published by Institute of Electrical and Electronics Engineers Inc.. It's publishing house is located in United States. Coverage history of this conference and proceedings is as following: 1992, 2005-2024. The organization or individual who handles the printing and distribution of printed or digital publications is known as Publisher.
Visit the official website of the journal/conference to check the further details about the call for papers.
The IS0 4 standard abbreviation of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is Proc. Int. Symp. Power Semicond. Devices ICs. This abbreviation ('Proc. Int. Symp. Power Semicond. Devices ICs') is well recommended and approved for the purpose of indexing, abstraction, referencing and citing goals. It meets all the essential criteria of ISO 4 standard.
ISO 4 (International Organization for Standardization 4) is an international standard that defines a uniform and consistent system for abbreviating serial publication titles and journals.
If your research field is/are related to Engineering (miscellaneous), then please visit the official website of this conference and proceedings.
The acceptance rate/percentage of any academic journal/conference depends upon many parameters. Some of the critical parameters are listed below.
It is essential to understand that the acceptance rate/rejection rate of papers varies among journals. Some Journals considers all the manuscripts submissions as a basis of acceptance rate computation. On the other hand, few consider the only manuscripts sent for peer review or few even not bother about the accurate maintenance of total submissions. Hence, it can provide a rough estimation only.
The best way to find out the acceptance rate is to reach out to the associated editor or to check the official website of the Journal/Conference.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs latest impact IF is 2.19. It's evaluated in the year 2024. The highest and the lowest impact IF or impact score of this conference and proceedings are 2.50 (2017) and 1.60 (2014), respectively, in the last 8 years. Moreover, its average IS is 2.02 in the previous 8 years.
The Proceedings of the International Symposium on Power Semiconductor Devices and ICs has an SJR (SCImago Journal Rank) of 0.635, according to the latest data. It is computed in the year 2025. In the past 8 years, this conference and proceedings has recorded a range of SJR, with the highest being 0.771 in 2018 and the lowest being 0.462 in 2017. Furthermore, the average SJR of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs over the previous 8-year period stands at 2.02.
The latest h-index of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 55.
The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is published by the Institute of Electrical and Electronics Engineers Inc., with its country of publication being the United States.
The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is currently ranked 9089 out of 27955 Journals, Conferences, and Book Series in the latest ranking. Over the course of the last 8 years, this conference and proceedings has experienced varying rankings, reaching its highest position of 6161 in 2018 and its lowest position of 9816 in 2017.
The standard ISO4 abbreviation for the Proceedings of the International Symposium on Power Semiconductor Devices and ICs is Proc. Int. Symp. Power Semicond. Devices ICs.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs is classified as a conference and proceedings that the Institute of Electrical and Electronics Engineers Inc. publishes.
The Proceedings of the International Symposium on Power Semiconductor Devices and ICs encompasses the following areas:
For a more comprehensive understanding of its scope, check the official website of this conference and proceedings.
The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is assigned the following International Standard Serial Numbers (ISSN): 10636854.
The Proceedings of the International Symposium on Power Semiconductor Devices and ICs coverage history can be summarized as follows: 1992, 2005-2024.
| Journal/Conference/Workshop/Book Title | Type | Ranking | Publisher | h-index | Impact Score |
|---|---|---|---|---|---|
| Proceedings of the International Symposium on Power Semiconductor Devices and ICs | conference and proceedings | 9089 | Institute of Electrical and Electronics Engineers Inc. | 55 | 2.19 |
| Milan Journal of Mathematics | journal | 5131 | Birkhauser Verlag Basel | 31 | 0.74 |
| International Journal of Mathematical Education in Science and Technology | journal | 6477 | Taylor and Francis Ltd. | 45 | 1.82 |
| Journal, Indian Academy of Clinical Medicine | journal | 28559 | Indian Academy of Clinical Medicine | 16 | 0.10 |
| British Journal of Special Education | journal | 14055 | Wiley-Blackwell Publishing Ltd | 45 | 1.43 |
| Studies in Continuing Education | journal | 4850 | Routledge | 44 | 3.35 |
| Tekstilec | trade journal | 17340 | University of Ljubljana Press | 16 | 1.29 |
| Korean Journal of Applied Microbiology and Biotechnology | journal | 22033 | Korean Society for Applied Microbiology | 0 | 0.00 |
| Museum Management and Curatorship | journal | 10490 | Routledge | 43 | 2.06 |
| Acta Periodica Technologica | journal | 22883 | University of Novi Sad, Faculty of Technology | 22 | 0.71 |
| Year | Impact Score (IS) |
|---|---|
| 2025/2026 | Coming Soon |
| 2024 | 2.19 |
| 2020 | 2.14 |
| 2019 | 1.98 |
| 2018 | 2.08 |
| 2017 | 2.50 |
| 2016 | 2.07 |
| 2015 | 1.63 |
| 2014 | 1.60 |